The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2018

Filed:

Feb. 27, 2017
Applicant:

Glo Ab, Lund, SE;

Inventors:

Martin Schubert, Sunnyvale, CA (US);

Daniel Bryce Thompson, Walnut Creek, CA (US);

Michael Grundmann, Sunnyvale, CA (US);

Nathan Gardner, Sunnyvale, CA (US);

Assignee:

GLO AB, Lund, SE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 33/507 (2013.01); H01L 27/153 (2013.01); H01L 33/502 (2013.01);
Abstract

A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second band gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.


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