The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
Apr. 16, 2014
Applicant:
Spansion Llc, Sunnyvale, CA (US);
Inventors:
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/792 (2006.01); H01L 21/8234 (2006.01); H01L 27/115 (2017.01); H01L 27/11568 (2017.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 21/823418 (2013.01); H01L 27/115 (2013.01); H01L 27/11568 (2013.01); H01L 29/66833 (2013.01); H01L 29/7923 (2013.01);
Abstract
An embodiment of the present invention is directed to a memory cell. The memory cell includes a first trench formed in a semiconductor substrate and a second trench formed in said semiconductor substrate adjacent to said first trench. The first trench and the second trench each define a first side wall and a second sidewall respectively. The memory cell further includes a first storage element formed on the first sidewall of the first trench and a second storage element formed on the second sidewall of the second trench.