The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2018

Filed:

Nov. 21, 2014
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Chunsheng Jiang, Beijing, CN;

Lung Pao Hsin, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/425 (2006.01); H01L 21/441 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/02565 (2013.01); H01L 21/425 (2013.01); H01L 21/441 (2013.01); H01L 21/76829 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/0684 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A thin film transistor, a manufacturing method thereof, an array substrate and a display apparatus are disclosed. The manufacturing method includes forming a gate electrode (), a gate insulating layer (), an active region (), a source electrode () and a drain electrode () on a base substrate () with the active region being formed of ZnON material, and implanting the active region () with nitrogen ion while it being formed, so as to make the sub-threshold swing amplitude of the thin film transistor less than or equal to 0.5 mV/dec. The manufacturing method reduces the sub-threshold swing amplitude of the thin film transistor and improves the semiconductor characteristics of the thin film transistor.


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