The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
Feb. 24, 2017
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Yasunobu Saito, Ishikawa, JP;
Kohei Oasa, Ishikawa, JP;
Takuo Kikuchi, Kanagawa, JP;
Junji Kataoka, Kanagawa, JP;
Tatsuya Shiraishi, Ishikawa, JP;
Akira Yoshioka, Ishikawa, JP;
Kazuo Saki, Mie, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A semiconductor device includes: a first nitride semiconductor layer, a second nitride semiconductor layer that is provided on the first nitride semiconductor layer and has a band gap larger than a band gap of the first nitride semiconductor layer, a gate electrode that is provided on the first nitride semiconductor layer, a first electrode that is electrically connected to the first nitride semiconductor layer, a second electrode disposed such that the gate electrode is positioned between the first electrode and the second electrode, and electrically connected to the first nitride semiconductor layer, and a first insulation layer that is provided between the gate electrode and the second electrode, disposed such that the second nitride semiconductor layer is positioned between the first nitride semiconductor layer and the first insulation layer, and including silicon oxide having an oxygen-to-silicon atomic ratio (O/Si) of 1.50 or more and 1.85 or less.