The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
Jul. 21, 2016
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventor:
Utz Herwig Hahn, Adliswil, CH;
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01S 5/343 (2006.01); H01L 29/45 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01S 5/042 (2006.01);
U.S. Cl.
CPC ...
H01L 29/452 (2013.01); H01L 21/02543 (2013.01); H01L 21/28518 (2013.01); H01L 29/20 (2013.01); H01S 5/0421 (2013.01); H01S 5/0425 (2013.01); H01S 5/343 (2013.01);
Abstract
A device includes an n-doped InP layer and an ohmic contact, in contact with the n-doped InP layer. The ohmic contact includes an annealed stack of at least three, or preferably four alternating layers of Si and Ni, such that: (i) the n-doped InP layer and one of the layers of the stack in contact with the n-doped InP layer are at least partly intermixed; and (ii) any two adjacent layers of the stack are at least partly intermixed. Related fabrication methods are also disclosed.