The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2018

Filed:

Jun. 29, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ning Li, White Plains, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Robert L. Wisnieff, Ridgefield, CT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 27/146 (2006.01); H01L 31/0304 (2006.01); H01L 31/105 (2006.01); H01L 31/028 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 27/1465 (2013.01); H01L 27/1469 (2013.01); H01L 27/14647 (2013.01); H01L 27/14652 (2013.01); H01L 27/14694 (2013.01); H01L 31/028 (2013.01); H01L 31/0304 (2013.01); H01L 31/105 (2013.01);
Abstract

A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group III-V semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.


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