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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9917107 B1

PDFFull Text
Date of Patent:
Mar. 13, 2018

Filed:

Oct. 02, 2015

Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Inventors:

Koji Ono, Kanagawa, JP;

Hideomi Suzawa, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., , JP;

Attorney:

Husch Blackwell LLP

Primary Examiner:

Thanh Y Tran

Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 29/04 (2006.01); H01L 29/15 (2006.01); H01L 31/036 (2006.01); H01L 27/12 (2006.01); C23F 4/00 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01B 1/02 (2006.01); H01B 5/14 (2006.01); H01B 13/00 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1214 (2013.01); C23F 4/00 (2013.01); H01B 1/02 (2013.01); H01B 5/14 (2013.01); H01B 13/0006 (2013.01); H01B 13/0036 (2013.01); H01L 21/32136 (2013.01); H01L 21/76838 (2013.01); H01L 27/12 (2013.01); H01L 27/124 (2013.01); H01L 29/42376 (2013.01); H01L 29/456 (2013.01); H01L 29/495 (2013.01); H01L 29/4908 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

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