The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2018

Filed:

Feb. 27, 2015
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Takeshi Kamigaichi, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/792 (2006.01); H01L 27/11582 (2017.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/28282 (2013.01); H01L 29/45 (2013.01); H01L 29/495 (2013.01); H01L 29/7926 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode layers and a plurality of inter-layer insulating layers each provided between the plurality of electrode layers; and a columnar portion penetrating the stacked body and extending in a stacking direction of the stacked body. The columnar portion includes a channel body extending in the stacking direction; and a charge storage film provided between the channel body and each of the electrode layers. Each of the electrode layers includes an edge portion provided closer on a central axis side of the columnar portion than the inter-layer insulating layers. The charge storage film covers the edge portion of each of the electrode layers and separated from each other in the stacking direction.


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