The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
May. 28, 2015
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Katsuhisa Kugimiya, Kanagawa, JP;
Kenichi Murata, Kanagawa, JP;
Hitoshi Okano, Kanagawa, JP;
Shigetaka Mori, Kanagawa, JP;
Hiroyuki Kawashima, Kumamoto, JP;
Takuma Matsuno, Kumamoto, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 29/04 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01); H01L 31/036 (2006.01); H01L 27/108 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10847 (2013.01); H01L 27/108 (2013.01); H01L 27/1462 (2013.01); H01L 27/14634 (2013.01);
Abstract
A method of manufacturing a semiconductor device, includes: forming an insulating film on a first surface of a semiconductor substrate; and forming a hydrogen supply film on a second surface facing the first surface of the semiconductor substrate, the hydrogen supply film containing one or more of silicon oxide, TEOS, BPSG, BSG, PSG, FSG, carbon-containing silicon oxide, silicon nitride, carbon-containing silicon nitride, and oxygen-containing silicon carbide.