The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2018

Filed:

Apr. 30, 2015
Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventors:

Satoshi Morishita, Osaka, JP;

Tadashi Yasui, Osaka, JP;

Takao Kinoshita, Osaka, JP;

Tomotoshi Satoh, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); B24B 27/06 (2006.01); H01L 23/544 (2006.01); H01L 29/20 (2006.01); H01L 21/311 (2006.01); B24B 37/10 (2012.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); B24B 27/06 (2013.01); B24B 37/105 (2013.01); H01L 21/31116 (2013.01); H01L 23/544 (2013.01); H01L 29/2003 (2013.01); H01L 22/14 (2013.01); H01L 2223/5446 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01);
Abstract

A semiconductor wafer is provided with a substrate, a GaN type semiconductor film which is laminated on the substrate, a plurality of element regions which are provided on the GaN type semiconductor film, a dielectric film which is laminated on the GaN type semiconductor film, and a dicing region which has a dicing groove which is provided in a lattice form without passing through the dielectric film described above so as to partition the element regions described above. Then, an end on the element region side of the dicing groove is higher or lower than a central portion of the dicing groove in a width direction in a bottom surface of the dicing groove.


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