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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9916984 B1

PDFFull Text
Date of Patent:
Mar. 13, 2018

Filed:

Apr. 10, 2017

Self-aligned source and drain regions for semiconductor devices

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Joel P. de Souza, Putnam Valley, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Jeehwan Kim, Los Angeles, CA (US);

Siegfried L. Maurer, Stormville, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Louis J. Percello

Primary Examiner:

Dao H Nguyen

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 21/283 (2006.01); H01L 21/3213 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); A23C 9/123 (2006.01); A23C 11/08 (2006.01); A23C 9/13 (2006.01);
U.S. Cl.
CPC ...
H01L 21/283 (2013.01); H01L 21/3213 (2013.01); H01L 21/32133 (2013.01); H01L 29/0847 (2013.01); H01L 29/401 (2013.01); H01L 29/6656 (2013.01); H01L 29/66446 (2013.01); H01L 29/66636 (2013.01); H01L 29/78 (2013.01); A23C 9/123 (2013.01); A23C 9/1315 (2013.01); A23C 11/08 (2013.01);
Abstract

A method for forming a semiconductor device includes patterning a gate conductor, formed on a substrate, and a two-dimensional material formed on the gate conductor. Recesses are formed adjacent to the gate conductor in the substrate, and a doped layer is deposited in the recesses and over a top of the two-dimensional material. Tape is adhered to the doped layer on top of the two-dimensional material. The tape is removed to exfoliate the doped layer from the top of the two-dimensional material to form source and drain regions in the recesses.

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