The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2018

Filed:

Feb. 02, 2009
Applicants:

Nan Chen, San Diego, CA (US);

Mehdi Hamidi Sani, San Diego, CA (US);

Ritu Chaba, San Diego, CA (US);

Inventors:

Nan Chen, San Diego, CA (US);

Mehdi Hamidi Sani, San Diego, CA (US);

Ritu Chaba, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/12 (2006.01); G11C 17/18 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 17/18 (2013.01); G11C 5/147 (2013.01); G11C 7/12 (2013.01); G11C 5/14 (2013.01);
Abstract

Memory devices and methods of reducing leakage current therein are disclosed. The memory device includes a memory core array including a plurality of bitlines, and peripheral logic configured to interface with the memory core array. The memory device further includes a footswitch configured to isolate the peripheral logic from a ground voltage, and a headswitch configured to isolate a precharge current path from the plurality of bit lines of the memory core array. Leakage current within the memory device may be reduced via the isolation provided by the footswitch and the headswitch.


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