The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2018

Filed:

Aug. 23, 2016
Applicants:

Yoon Kim, Yongin-si, KR;

Dong-chan Kim, Seoul, KR;

Ji-sang Lee, Iksan-si, KR;

Inventors:

Yoon Kim, Yongin-si, KR;

Dong-chan Kim, Seoul, KR;

Ji-sang Lee, Iksan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 16/14 (2006.01); G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/107 (2013.01); G11C 16/349 (2013.01); G11C 11/5635 (2013.01); G11C 16/0483 (2013.01);
Abstract

A memory device, comprising: a memory cell array including a plurality of NAND strings, each NAND string including a plurality of memory cells respectively connected to a plurality of word lines vertically stacked on a substrate; and a control logic configured to generate a pre-programming control signal for memory cells of a first NAND string of the NAND strings such that, before erasing the memory cells of the first NAND string, pre-programming voltages applied to the word lines coupled to the corresponding memory cells of the first NAND string vary based on an operating characteristic of the corresponding memory cells.


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