The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
Jan. 31, 2014
Applicant:
Hewlett Packard Enterprise Development Lp, Houston, TX (US);
Inventors:
Raphael Gay, Fort Collins, CO (US);
Siamak Tavallaei, Spring, TX (US);
Assignee:
Hewlett Packard Enterprise Development LP, Houston, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 12/08 (2016.01); G06F 3/06 (2006.01); G06F 13/16 (2006.01); G06F 12/0802 (2016.01); G06F 12/02 (2006.01); G06F 12/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0611 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G06F 12/0802 (2013.01); G06F 13/1689 (2013.01); G06F 12/0238 (2013.01); G06F 12/0638 (2013.01); G06F 2212/1024 (2013.01); G06F 2212/205 (2013.01); G06F 2212/60 (2013.01);
Abstract
Example implementations relate to using an alternative memory (AltMem) to reduce read latency of a memory module having a dynamic random-access memory (DRAM). In example implementations, write data may be written to the DRAM and to the AltMem. A read command may be issued to the AltMem if a DRAM read latency time for executing the read command is greater than an AltMem read latency time for executing the read command. Data read from the AltMem in response to the read command may be received.