Nonvolatile memory device and storage device for storing bad block management information with high reliability

Abstract

A nonvolatile memory device is provided. The nonvolatile memory device includes a memory cell array comprising a first area that stores memory management information and a second area that stores user data, a decoder configured to select at least one of rows of the first area or the second area based on an address, a page buffer configured to store data in memory cells connected to the selected at least one row or to detect data stored in the memory cells, and control logic configured to control the decoder and the page buffer in response to a specific command, to access the first area. The memory management information is iteratively programmed by a specific memory unit and is written at different columns of specific memory units.