The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2018

Filed:

May. 09, 2017
Applicants:

Pao Tai Lin, Brighton, MA (US);

Jurgen Michel, Arlington, MA (US);

Anuradha Murthy Agarwal, Weston, MA (US);

Inventors:

Pao Tai Lin, Brighton, MA (US);

Jurgen Michel, Arlington, MA (US);

Anuradha Murthy Agarwal, Weston, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 5/02 (2006.01); G02B 6/293 (2006.01); G02B 6/122 (2006.01); G01N 21/64 (2006.01); G01N 21/65 (2006.01); G01N 21/77 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/29338 (2013.01); G01N 21/648 (2013.01); G01N 21/65 (2013.01); G01N 21/7746 (2013.01); G02B 6/122 (2013.01); G02B 6/29395 (2013.01); G02B 2006/12038 (2013.01); G02B 2006/12061 (2013.01);
Abstract

A device includes a substrate, a pedestal extending from the substrate, and a ring resonator disposed on the pedestal above the substrate. The ring resonator has a resonance wavelength greater than 1.5 μm and includes at least one of silicon and chalcogenide glass. The device can be used as a ring resonator sensor or a light source. The ring resonator is substantially transparent to mid-infrared radiation to reduce optical losses. The pedestal has a narrower width compared to the ring resonator to generate improved interaction between evanescent fields of light in the ring resonator and analytes nearby the ring resonator, thereby increasing sensing sensitivity. In addition, fabrication of the device is compatible with complementary metal-oxide-semiconductor (CMOS) processes and hence is amenable to large scale manufacturing.


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