The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
May. 02, 2014
Applicants:
Tamura Corporation, Tokyo, JP;
Koha Co., Ltd., Tokyo, JP;
Inventors:
Assignees:
TAMURA CORPORATION, Tokyo, JP;
KOHA CO., LTD., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 15/34 (2006.01); C30B 29/16 (2006.01); C30B 15/36 (2006.01);
U.S. Cl.
CPC ...
C30B 15/34 (2013.01); C30B 15/36 (2013.01); C30B 29/16 (2013.01);
Abstract
Provided is one embodiment which is a method for growing a β-GaO-based single crystal which uses the EFG method and includes raising a GaOmelt inside a crucible up to a die opening via a die slit such that a seed crystal is contacted with the GaO-based melt in the opening of the die with a horizontal position of the seed crystal shifted in a width direction (W) from a center in the width direction (W) of the die, and pulling up the seed crystal contacting the GaO-based melt so as to grown a β-GaOsingle crystal.