The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
May. 02, 2014
Tamura Corporation, Tokyo, JP;
Koha Co., Ltd., Tokyo, JP;
Kimiyoshi Koshi, Tokyo, JP;
Shinya Watanabe, Tokyo, JP;
TAMURA CORPORATION, Tokyo, JP;
KOHA CO., LTD., Tokyo, JP;
Abstract
Provided is one embodiment which is a method for growing a β-GaO-based single crystal including contacting a flat plate-shaped seed crystal with a GaO-based melt, and pulling up the seed crystal such that a flat plate-shaped β-GaO-based single crystal having a principal surface which intersects a surface is grown without inheriting a crystal information of a vaporized material of the GaO-based melt adhered to the principal surface of the seed crystal, wherein when growing the β-GaO-based single crystal, a shoulder of the β-GaO-based single crystal is widened in a thickness direction (t) thereof.