The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2018

Filed:

Sep. 14, 2015
Applicant:

Ndsu Research Foundation, Fargo, ND (US);

Inventors:

Guruvenket Srinivasan, Fargo, ND (US);

Robert A. Sailer, West Fargo, ND (US);

Justin Hoey, Fargo, ND (US);

Assignee:

NDSU RESEARCH FOUNDATION, Fargo, ND (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/24 (2006.01); C23C 16/448 (2006.01); C23C 16/34 (2006.01); C23C 18/02 (2006.01); C23C 18/12 (2006.01); C09D 183/16 (2006.01); C23C 16/02 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); C08G 77/60 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4486 (2013.01); C09D 183/16 (2013.01); C23C 16/0209 (2013.01); C23C 16/24 (2013.01); C23C 16/345 (2013.01); C23C 16/56 (2013.01); C23C 18/02 (2013.01); C23C 18/122 (2013.01); C23C 18/1204 (2013.01); C23C 18/127 (2013.01); C23C 18/1258 (2013.01); C23C 18/1291 (2013.01); H01L 21/0259 (2013.01); H01L 21/0262 (2013.01); H01L 21/02118 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); C08G 77/60 (2013.01);
Abstract

An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.


Find Patent Forward Citations

Loading…