The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Aug. 10, 2016
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventor:
Yuichi Goto, Hiratsuka Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/687 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); H01L 27/0629 (2013.01); H01L 29/2003 (2013.01); H01L 29/7787 (2013.01); H01L 29/78 (2013.01);
Abstract
A semiconductor device includes a first transistor and a second transistor connected in series between a first voltage source and a second voltage source. A diode is connected between a gate of the first transistor and the second voltage source. A capacitor is connected to the gate of the first transistor. A first driver is connected to the gate of the first transistor through the capacitor. A second driver is connected to a gate of the second transistor. A threshold voltage of the second transistor is higher than a threshold voltage of the first transistor.