The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2018

Filed:

Jan. 31, 2017
Applicants:

SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;

Industrial Cooperation Foundation Chonbuk National University, Jeonju-si, Jeollabuk-do, KR;

Inventors:

Hee Jun Kim, Icheon-si, KR;

Sang Won Lee, Seongnam-si, KR;

Hang Geun Jeong, Jeonju-si, KR;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/567 (2006.01); H01L 29/08 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H03K 17/567 (2013.01); H01L 29/0821 (2013.01); H01L 27/0623 (2013.01);
Abstract

A circuit for controlling a collector current of a substrate bipolar junction transistor (BJT) is provided. The circuit includes a first current mirror configured to generate a first mirroring base current corresponding to a replicate current of a base current of the substrate BJT, a current transmitter configured to transmit the first mirroring base current, a second current mirror configured to generate a second mirroring base current corresponding to a replicate current of the first mirroring base current received from the current transmitter and configured to supply the second mirroring base current to an emitter of the substrate BJT, and a current source configured to supply a drive current corresponding to a collector current of the substrate BJT to the emitter of the substrate BJT.


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