The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Dec. 23, 2016
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Ikuo Fukami, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/081 (2006.01); H02P 7/28 (2016.01); H01L 27/088 (2006.01); H02M 3/07 (2006.01);
U.S. Cl.
CPC ...
H03K 17/08104 (2013.01); H01L 27/088 (2013.01); H02M 3/07 (2013.01); H02P 7/28 (2013.01); H03K 2217/0018 (2013.01);
Abstract
A semiconductor device includes a high side driver, in which the high side driver has an output transistor configured to supply a power voltage to an output terminal based on a driving voltage applied to a gate electrode of the output transistor; a short circuit transistor configured to couple the gate electrode of the output transistor with the output terminal; and a switch transistor connected in series between the gate electrode of the output transistor and a drain electrode of the short circuit transistor. The switch transistor is controlled by a back gate of the switch transistor.