The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2018

Filed:

Dec. 22, 2016
Applicant:

Infineon Technologies Dresden Gmbh, Dresden, DE;

Inventors:

Alessia Scire, Dresden, DE;

Dieter Kaiser, Dresden, DE;

Tarja Hauck, Dresden, DE;

Frank Zschorlich, Wittichenau, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/56 (2006.01); H01L 51/52 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 51/56 (2013.01); H01L 27/3276 (2013.01); H01L 51/5275 (2013.01);
Abstract

According to various embodiments, an optoelectronic component may be provided, the optoelectronic component including: an electrode structure disposed at least one of over and in a carrier; and a grating structure disposed over the electrode structure, the grating structure including at least a first region and a second region, wherein the first region of the grating structure includes amorphous silicon; and wherein the second region of the grating structure includes a material having a refractive index different from the refractive index of the amorphous silicon.


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