The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Feb. 08, 2017
Applicant:
Japan Display Inc., Minato-ku, JP;
Inventor:
Noriyoshi Kanda, Tokyo, JP;
Assignee:
Japan Display Inc., Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/441 (2006.01); H01L 21/4763 (2006.01); H01L 29/24 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/02565 (2013.01); H01L 21/441 (2013.01); H01L 21/47635 (2013.01); H01L 29/24 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); H01L 29/66969 (2013.01);
Abstract
According to one embodiment, a manufacturing method of thin film transistor includes forming an oxide semiconductor layer on a first insulating film, forming a first conductive layer formed of molybdenum or a molybdenum alloy on the oxide semiconductor layer, forming a second conductive layer on the first conductive layer, forming a resist mask on the second conductive layer, and forming a first conductive portion and a second conductive portion by performing dry etching of the second conductive layer using the resist mask.