The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Oct. 29, 2010
Chan-long Shieh, Paradise Valley, AZ (US);
Fatt Foong, Goleta, CA (US);
Gang Yu, Santa Barbara, CA (US);
Chan-Long Shieh, Paradise Valley, AZ (US);
Fatt Foong, Goleta, CA (US);
Gang Yu, Santa Barbara, CA (US);
CBRITE INC., Goleta, CA (US);
Abstract
A metal oxide semiconductor device including an active layer of metal oxide, a layer of gate dielectric, and a layer of low trap density material. The layer of low trap density material is sandwiched between the active layer of metal oxide and the layer of gate dielectric. The layer of low trap density material has a major surface parallel and in contact with a major surface of the active layer of metal oxide to form a low trap density interface with the active layer of metal oxide. A second layer of low trap density material can optionally be placed in contact with the opposed major surface of the active layer of metal oxide so that a low trap density interface is formed with both surfaces of the active layer of metal oxide.