The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Dec. 11, 2015
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Yusuke Fukuda, Hanno, JP;
Yoshiyuki Watanabe, Hanno, JP;
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Abstract
A method for manufacturing a silicon carbide semiconductor device comprises: a step for forming a front-surface electrode () on a front surface side of a silicon carbide wafer (); a step for thinning the silicon carbide wafer () by reducing a thickness of the silicon carbide wafer () from a back surface side thereof; a step for providing a metal layer () on the back surface of the thinned silicon carbide wafer (); a step for irradiating the metal layer () with laser light, while applying an external force such that the silicon carbide wafer and the metal layer are planarized, to form the carbide layer () obtained by a reaction with carbon in the silicon carbide wafer (), on a back surface side of the metal layer (); and a step for forming a back-surface electrode () on a back surface side of the carbide layer ().