The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Feb. 03, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Yuichiro Sasaki, Seoul, KR;
Bong Soo Kim, Hwaseong-si, KR;
Tae Gon Kim, Seoul, KR;
Yoshiya Moriyama, Seongnam-si, KR;
Seung Hyun Song, Hwaseong-si, KR;
Alexander Schmidt, Suwon-si, KR;
Abraham Yoo, Hwaseong-si, KR;
Heung Soon Lee, Pohang-si, KR;
Kyung In Choi, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A semiconductor device having an impurity region is provided. The semiconductor device includes a fin active region having protruding regions and a recessed region between the protruding regions. Gate structures overlapping the protruding regions are disposed. An epitaxial layer is disposed in the recessed region to have a height greater than a width. An impurity region is disposed in the fin active region, surrounds side walls and a bottom of the recessed region, has the same conductivity type as a conductivity type of the epitaxial layer, and includes a majority impurity that is different from a majority impurity included in at least a portion of the epitaxial layer.