The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Sep. 22, 2014
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Denso Corporation, Kariya-shi, Aichi-ken, JP;
Jun Saito, Nagoya, JP;
Sachiko Aoi, Nagoya, JP;
Yukihiko Watanabe, Nagoya, JP;
Toshimasa Yamamoto, Ichinomiya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes a semiconductor substrate. The element region of the semiconductor substrate includes a first body region having a first conductivity type, a first drift region having a second conductivity type, and a plurality of first floating regions, each the first floating regions having the first conductivity type. The termination region includes a second drift region having the second conductivity type, and a plurality of second floating regions, each of the second floating regions having the first conductivity type. The each of the second floating regions is surrounded by the second drift region. When a depth of a center of the first drift region is taken as a reference depth, at least one of the second floating regions is placed closer to the reference depth than each of the first floating regions.