The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2018

Filed:

Aug. 01, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Takayuki Kashima, Yokkaichi, JP;

Masahiro Fukuda, Kuwana, JP;

Takashi Hirotani, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 21/04 (2006.01); H01L 27/11582 (2017.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/3083 (2013.01); H01L 21/30604 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a stacked body provided on the semiconductor substrate and including a plurality of electrode films being disposed to be separated from each other along a vertical direction, a first semiconductor member provided inside the stacked body and contacting the semiconductor substrate, a second semiconductor member provided on the first semiconductor member inside the stacked body, contacting the first semiconductor member and extending in the vertical direction, and an insulating film provided between the second semiconductor member and the electrode films. A configuration of a contact surface between the first semiconductor member and the second semiconductor member is convex downward.


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