The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2018

Filed:

Aug. 02, 2016
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventor:

Tatsuo Tonedachi, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/12 (2006.01); H01L 25/16 (2006.01); H01L 33/62 (2010.01); H01L 31/16 (2006.01); H01L 33/56 (2010.01); H01L 33/06 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); H01L 31/165 (2013.01); H01L 33/06 (2013.01); H01L 33/38 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01);
Abstract

A semiconductor device includes a light emitting element comprising a substrate having a first and a second surface and an outer edge connecting the first and second surfaces. A light emitting layer is on a central portion of the first surface but not on a peripheral portion between the central portion and the outer edge of the substrate. A first insulating layer is disposed on the peripheral portion of the first surface, a side surface of the light emitting layer, and a third surface of the light emitting layer that is spaced from the first surface of the substrate. A first electrode is electrically contacting the third surface of the light emitting layer. A light receiving element is provided in a propagation path of light emitted from the light emitting element.


Find Patent Forward Citations

Loading…