The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2018

Filed:

Jul. 05, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyo-Seon Choi, Hwaseong-si, KR;

Seungmo Kang, Hwaseong-si, KR;

Sang-ki Kim, Yongin-si, KR;

Yooncheol Bang, Daegu, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/498 (2006.01); H01L 23/544 (2006.01); H01L 23/00 (2006.01); H01L 23/50 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/50 (2013.01); H01L 23/544 (2013.01); H01L 24/09 (2013.01); H01L 23/3128 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/02317 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/06131 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06565 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A semiconductor device includes a semiconductor chip substrate with a chip region and a scribe lane region, center and boundary pads respectively provided on the chip and scribe lane regions, a lower insulating structure provided on the chip region and the scribe lane region, a first conductive pattern including a contact portion, a conductive line portion, and a bonding pad portion, and an upper insulating structure defining first and second openings formed on the bonding pad portion and the boundary pad. The lower insulating structure includes a plurality of lower insulating layers, which are sequentially stacked on the substrate, and each of which is a silicon-containing inorganic layer.


Find Patent Forward Citations

Loading…