The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Mar. 30, 2016
Boe Technology Group Co., Ltd., Beijing, CN;
Chengdu Boe Optoelectronics Technology Co., Ltd., Chengdu, Sichuan Province, CN;
Xinghua Li, Beijing, CN;
Junping Bao, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Chengdu, Sichuan Province, CN;
Abstract
Embodiments of the present invention disclose a low temperature poly-silicon thin film transistor and a method of fabricating the same, an array substrate, and a display device. The low temperature poly-silicon thin film transistor comprises an active layer, a source and a drain, wherein the active layer comprises a source contact region, a drain contact region, and a channel region located between the source contact region and the drain contact region, the source is provided above and connected to the source contact region, the drain being provided above and connected to the drain contact region, and thicknesses of the source contact region and the drain contact region are both larger than that of the channel region.