logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9911612 B1

PDFFull Text
Expired
Date of Patent:
Mar. 06, 2018

Filed:

Mar. 02, 2016

Methods of manufacturing semiconductor devices including impurity regions

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Choong-Yeol Kim, Seoul, KR;

Myung-Beom Park, Hwaseong-si, KR;

Han-Gyul Ko, Seoul, KR;

Hwi-Hyeon Oh, Hwaseong-si, KR;

Hye-Young Jin, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:

Lee & Morse, P.C.

Primary Examiner:

Marvin Payen

Assistant Examiner:

Jeremy Joy

Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/425 (2006.01); H01L 29/06 (2006.01); H01L 21/266 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01J 37/00 (2006.01); H01L 29/10 (2006.01); H01J 37/317 (2006.01); H01J 37/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2658 (2013.01); H01J 37/00 (2013.01); H01L 21/265 (2013.01); H01L 21/266 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/823814 (2013.01); H01L 29/0623 (2013.01); H01L 29/1083 (2013.01); H01L 29/66492 (2013.01); H01L 29/66575 (2013.01); H01J 37/08 (2013.01); H01J 37/3171 (2013.01);
Abstract

In a method of manufacturing a semiconductor device, a semiconductor substrate is prepared. Boron-containing ions are generated by reacting a borane-based compound and a halogen-containing source with each other. The borane-based compound includes boron having a mass number of 11 (B). The boron-containing ions are implanted into the semiconductor substrate to form an impurity region.

Find Patent Forward Citations

Kim, Choong-Yeol. (2018). Methods of manufacturing semiconductor devices including impurity regions (U.S. Patent No. 9911612). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9911612

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…