The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2018

Filed:

Dec. 14, 2015
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Jae Hyeong Jeong, Seoul, KR;

Kwang Hyun Kim, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 8/06 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 8/06 (2013.01); G11C 7/109 (2013.01); G11C 7/1045 (2013.01); G11C 7/1063 (2013.01); G11C 7/22 (2013.01);
Abstract

A semiconductor memory device includes a plurality of memory cells; a peripheral circuit suitable for controlling the memory cells, and operating in first and second modes respectively corresponding to enablement and disablement of a chip selection signal; and a ready-busy signal generator suitable for biasing a ready-busy line according to whether the peripheral circuit is in a ready or busy state during the enablement of the chip selection signal. Communication between the semiconductor memory device and an external device is allowed in the first mode. The communication between the semiconductor memory device and the external device is not allowed in the second mode.


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