The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Apr. 27, 2015
Boe Technology Group Co., Ltd., Beijing, CN;
Hefei Boe Optoelectronics Technology Co., Ltd., Hefei, Anhui, CN;
Lei Zhang, Beijing, CN;
Zhuyi Luo, Beijing, CN;
Xiangming Meng, Beijing, CN;
Jinho Youn, Beijing, CN;
Jianqiang Guo, Beijing, CN;
Honglin Liao, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
HEFEI BOE OPTOELECTRONICS TECHNOLOSY CO., LTD., Hefei, Anhui, CN;
Abstract
A method of patterning a thin film is provided. The method includes coating a thin film layer and photoresist on a surface of a substrate; forming a first partially cured zone by performing a first exposing process of the photoresist with a mask, wherein exposing energy applied to the photoresist of the first partially cured zone is less than a photosensitive threshold of the photoresist; forming a cured zone on the first partially cured zone by performing a second exposing process of the photoresist with the mask, wherein a width of the cured zone is less than a width of the first partially cured zone, and exposing energy applied to the photoresist of the cured zone is equal to or greater than the photosensitive threshold of the photoresist; developing the photoresist; etching the thin film layer that is not covered by the photoresist; and removing the photoresist of the cured zone.