The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Aug. 26, 2016
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shunpei Yamazaki, Setagaya, JP;
Satoshi Murakami, Atsugi, JP;
Jun Koyama, Sagamihara, JP;
Yukio Tanaka, Okayama, JP;
Hidehito Kitakado, Atsugi, JP;
Hideto Ohnuma, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
This invention provides a semiconductor device having high operation performance and high reliability. An LDD regionoverlapping with a gate wiring is arranged in an n-channel TFTforming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regionsandnot overlapping with a gate wiring are arranged in an n-channel TFTforming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD regionthan in the LDD regionsand