The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Jun. 06, 2016
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Shohei Imai, Tokyo, JP;
Kazuya Yamamoto, Tokyo, JP;
Yoshinobu Sasaki, Tokyo, JP;
Shinichi Miwa, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H03K 17/16 (2006.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 17/162 (2013.01); H01L 27/0635 (2013.01); H01L 29/737 (2013.01); H01L 29/7838 (2013.01); H03K 2017/6875 (2013.01);
Abstract
A semiconductor device includes: a depletion-type field-effect transistor including a gate terminal, a drain terminal and a source terminal; a group III-V heterojunction bipolar transistor including a base terminal, an emitter terminal electrically connected to the gate terminal and a collector terminal connected to same potential as that of the source terminal; a first resistor connected between the base terminal and the emitter terminal; and a second resistor connected between the base terminal and the collector terminal.