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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9906205 B1

PDFFull Text
Date of Patent:
Feb. 27, 2018

Filed:

Feb. 11, 2016

Semiconductor device, manufacturing method of the same, and mobile phone

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Kengo Asai, Tokyo, JP;

Atsushi Isobe, Tokyo, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

Mattingly & Malur, PC

Primary Examiner:

Barbara Summons

Int. Cl.
CPC ...
H03H 9/70 (2006.01); H01L 41/332 (2013.01); H03H 9/05 (2006.01); H01L 27/06 (2006.01); H04B 1/036 (2006.01); H01L 23/31 (2006.01); H01L 41/09 (2006.01); H04B 1/40 (2015.01); H01L 23/36 (2006.01); H01L 23/373 (2006.01); H03F 3/19 (2006.01); H03F 3/21 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H03H 9/0542 (2013.01); H01L 23/3192 (2013.01); H01L 23/36 (2013.01); H01L 23/373 (2013.01); H01L 27/0629 (2013.01); H01L 41/0926 (2013.01); H01L 41/332 (2013.01); H03F 3/19 (2013.01); H03F 3/211 (2013.01); H03H 9/0571 (2013.01); H03H 9/706 (2013.01); H04B 1/036 (2013.01); H04B 1/40 (2013.01); H01L 29/4175 (2013.01); H01L 29/41758 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01); H01L 2924/0002 (2013.01); H03F 2200/171 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01);
Abstract

A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrateS including an area ARon which an LDMOSFET is formed and an area ARon which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrateS.

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