The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2018

Filed:

Apr. 06, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Weonkyu Koh, Suwon-si, KR;

Taeho Shin, Cheonan-si, KR;

Kyungsang Cho, Gwacheon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 51/502 (2013.01); H01L 51/4273 (2013.01); H01L 51/5072 (2013.01); H01L 51/5088 (2013.01); H01L 51/5096 (2013.01); H01L 51/426 (2013.01); H01L 2251/305 (2013.01);
Abstract

Provided are optoelectronic devices including quantum dots. An optoelectronic device may include an active layer including a quantum dot and at least one molecular interlayer adjacent to the active layer. The active layer may be provided between two electrodes, and a charge transfer layer may be provided adjacent to the active layer. The molecular interlayer may be provided between the active layer and the charge transfer layer. The molecular interlayer may have a smaller amount of surface charge than the charge transfer layer. The molecular interlayer may include a nonionic material or a hydrophobic material. The charge transfer layer may include an electron transport layer, and the electron transport layer may include an inorganic semiconductor.


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