The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Nov. 01, 2016
Fujifilm Corporation, Tokyo, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
Provided is a semiconductor device which includes a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound that has a repeating unit (IA) represented by the following Formula (IA) and a repeating unit (IB) represented by the following Formula (IB); and an insulating layer-forming composition which is used for forming an insulating layer of a semiconductor device and contains a polymer compound that has the following repeating units (IA) and (IB). In Formulae, Rand Reach independently represent a hydrogen atom, a halogen atom, or an alkyl group. L, L, and Leach independently represent a single bond or a linking group. X represents a crosslinkable group and Yrepresents a decomposable group or a hydrogen atom. m1a and m2a each independently represent an integer of 1 to 5. The symbol '*' represents a bonding position of the repeating units.