The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2018

Filed:

Feb. 02, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Takeshi Takagi, Yokkaichi, JP;

Takeshi Yamaguchi, Yokkaichi, JP;

Masaki Yamato, Yokkaichi, JP;

Hiroyuki Ode, Yokkaichi, JP;

Toshiharu Tanaka, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1246 (2013.01); H01L 27/2427 (2013.01); H01L 27/2481 (2013.01); H01L 45/146 (2013.01); H01L 45/1641 (2013.01); H01L 45/1666 (2013.01);
Abstract

According to one embodiment, a memory device includes a pillar, a first wiring, a second wiring, an insulating film provided between the first wiring and the second wiring, a first layer provided between the first wiring and the pillar in the second direction and including a first metal oxide containing a first metal and oxygen, a second layer provided between the second wiring and the pillar in the second direction and including the first metal oxide containing the first metal and oxygen, and an intermediate film provided between the pillar and the first layer and between the pillar and the second layer in the second direction and including a second metal oxide containing the first metal and oxygen. Concentration of oxygen contained in the first metal oxide is lower than concentration of oxygen contained in the second metal oxide.


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