Semiconductor storage device

Abstract

In a semiconductor storage device that is formed on a semiconductor substrate, flows a current to a recording material formed between electrodes to change a resistance value of the recording material and store information, and flows currents of different magnitudes in a high resistance change operation and a low resistance change operation, electrodes of a plurality of memory cells are electrically connected directly or via transistors to form large electrodes, the large electrodes are connected to a feeding terminal from a power source circuit, and the large electrodes are connected to large electrodes connected to a feeding terminal from a power source connected between a plurality of memory cells different from the plurality of memory cells via inter-large electrode connection transistors. By using the semiconductor storage device, a connection pattern of a feeding electrode for the memory cells can be configured according to the magnitude of a consumption current, power consumption by a voltage drop by a parasitic resistance of the feeding electrode and power consumption by charge/discharge of a parasitic capacitance around the feeding electrode can be suppressed, and performance per consumption power in read/set/reset operations can be improved.