The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Nov. 02, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jin-wook Chung, Yongin-si, KR;
Jung-jin Kim, Hwaseong-si, KR;
Pun-jae Choi, Yongin-si, KR;
Si-han Kim, Seoul, KR;
Sung-don Gang, Goyang-si, KR;
Ah-young Woo, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A semiconductor light emitting device may include a light emitting package. A light emitting package may include a light emitting stack including a sequential stack of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. An encapsulation layer may at least partially surround the second conductivity type semiconductor layer, and a wavelength conversion layer may cover the first conductivity type semiconductor layer. One or more of the encapsulation layer and the wavelength conversion layer may have a greater coefficient of thermal expansion (CTE) than a GaN-based compound semiconductor. The semiconductor light emitting device may include a stress applying structure that may apply a tensile stress to the light emitting stack. The light emitting stack may have reduced thermal droop at an operation temperature and improved luminous efficiency.