The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Mar. 16, 2016
AU Optronics Corporation, Hsinchu, TW;
Po-Liang Yeh, New Taipei, TW;
Chen-Chung Wu, Kaohsiung, TW;
Chun-An Chang, Hsinchu, TW;
Jiang-Jin You, Taoyuan, TW;
Chia-Ming Chang, Hsinchu, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
An active device structure and a method of fabricating an active device are provided. The active device structure includes a gate, an oxide channel layer, a source, a drain and a high power deposited insulation layer. The gate and the oxide channel layer are overlapped in a top and bottom manner. The oxide channel layer includes a top layer and a bottom layer having a crystalline structure different from a crystalline structure of the top layer. The source and the drain both contact the oxide channel layer, wherein a gap separating the source and the drain defines a channel area. The high power deposited insulation layer contacts the top layer of the oxide channel layer. The top layer of the oxide channel layer provides the effect of blocking light, which solves the problem of threshold voltage shift due to the light irradiation on the oxide channel layer.