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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9905685 B1

PDFFull Text
Date of Patent:
Feb. 27, 2018

Filed:

Apr. 27, 2016

Semiconductor device and trench field plate field effect transistor with a field dielectric including thermally grown and deposited portions

Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Ralf Siemieniec, Villach, AT;

Oliver Blank, Villach, AT;

Mario Kleindienst, Krumpendorf, AT;

Stefan Kramp, Villach, AT;

Assignee:

Infineon Technologies Austria AG, Villach, AT;

Attorney:

Baker Botts L.L.P.

Primary Examiner:

Monica D Harrison

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/781 (2013.01); H01L 29/0696 (2013.01); H01L 29/0865 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/513 (2013.01); H01L 29/7813 (2013.01); H01L 29/7843 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/31111 (2013.01); H01L 29/42368 (2013.01); H01L 29/7397 (2013.01); H01L 29/861 (2013.01);
Abstract

A semiconductor device includes compensation structures that extend from a first surface into a semiconductor portion. Sections of the semiconductor portion between neighboring ones of the compensation structures form semiconductor mesas. A field dielectric separating a field electrode in the compensation structures from the semiconductor portion includes a thermally grown portion, which directly adjoins the semiconductor portion. A not fully densified deposited portion of the field dielectric has a lower density than the thermally grown portion.

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