The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Jan. 05, 2016
Nxp B.v., Eindhoven, NL;
Petrus Hubertus Cornelis Magnee, Redhill, GB;
Joost Melai, Redhill, GB;
Viet Thanh Dinh, Redhill, GB;
Tony Vanhoucke, Redhill, GB;
NXP B.V., Eindhoven, NL;
Abstract
A semiconductor device comprising a bipolar transistor and a method of making the same. The bipolar transistor includes a collector having a laterally extending drift region. The bipolar transistor also includes a base located above the collector. The bipolar transistor further includes an emitter located above the base. The bipolar transistor also includes a reduced surface field (RESURF) gate located above an upper surface of the laterally extending drift region for shaping an electric field within the collector. The bipolar transistor further includes a gap located between the reduced surface field gate and an extrinsic region of the base of the device, for electrically isolating the reduced surface field gate from the base. A lateral dimension Lof the gap is in the range 0.1 μm≦L≦1.0 μm.