The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Sep. 18, 2014
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Renesas Electronics Corporation, Tokyo, JP;
Ryosuke Kubota, Osaka, JP;
Shunsuke Yamada, Osaka, JP;
Taku Horii, Osaka, JP;
Takeyoshi Masuda, Osaka, JP;
Daisuke Hamajima, Osaka, JP;
So Tanaka, Osaka, JP;
Shinji Kimura, Tokyo, JP;
Masayuki Kobayashi, Hitachinaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, and a gate electrode. The gate insulating film is provided as being in contact with the first main surface of the silicon carbide substrate. The gate electrode is provided on the gate insulating film such that the gate insulating film lies between the gate electrode and the silicon carbide substrate. In a first stress test in which a gate voltage of −5 V is applied to the gate electrode for 100 hours at a temperature of 175° C., an absolute value of a difference between a first threshold voltage and a second threshold voltage is not more than 0.5 V, with a threshold voltage before the first stress test being defined as the first threshold voltage and a threshold voltage after the first stress test being defined as the second threshold voltage.