The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Sep. 02, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Myung Gil Kang, Cohoes, NY (US);
Seung Han Park, Albany, NY (US);
Yong Hee Park, Cohoes, NY (US);
Sang Hoon Baek, Schenectady, NY (US);
Sang Woo Lee, Albany, NY (US);
Keon Yong Cheon, Albany, NY (US);
Sung Man Whang, Fishkill, NY (US);
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A vertical field effect transistor is provided as follows. A substrate has a lower drain and a lower source arranged along a first direction in parallel to an upper surface of the substrate. A fin structure is disposed on the substrate and extended vertically from the upper surface of the substrate. The fin structure includes a first end portion and a second end portion arranged along the first direction. A bottom surface of a first end portion of the fin structure and a bottom surface of a second end portion of the fin structure overlap the lower drain and the lower source, respectively. The fin structure includes a sidewall having a lower sidewall region, a center sidewall region and an upper sidewall region. A gate electrode surrounds the center side sidewall region of the fin structure.