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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9905640 B1

PDFFull Text
Date of Patent:
Feb. 27, 2018

Filed:

Oct. 05, 2015

Isolation structures for semiconductor devices including trenches containing conductive material

Applicants:

Skyworks Solutions (Hong Kong) Limited, Hong Kong, CN;

Advanced Analogic Technologies Incorporated, San Jose, CA (US);

Inventors:

Wai Tien Chan, Tai Po, CN;

Donald Ray Disney, Cupertino, CA (US);

Richard K. Williams, Cupertino, CA (US);

Assignees:

SKYWORKS SOLUTIONS (HONG KONG) LIMITED, Hong Kong, CN;

ADVANCED ANALOGIC TECHNOLOGIES INCORPORATED, San Jose, CA (US);

Attorney:

Lando & Anastasi, LLP

Primary Examiner:

Robert Huber

Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 21/761 (2006.01); H01L 21/762 (2006.01); H01L 21/763 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0646 (2013.01); H01L 21/26513 (2013.01); H01L 21/761 (2013.01); H01L 21/763 (2013.01); H01L 21/76224 (2013.01); H01L 21/76237 (2013.01); H01L 21/76243 (2013.01); H01L 21/76267 (2013.01); H01L 21/823481 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 29/0649 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An isolation structure formed in a semiconductor substrate of a first conductivity type includes a floor isolation region of a second conductivity type opposite to the first conductivity type submerged in the substrate. A first trench extends downward from a surface of the substrate and overlaps onto the floor isolation region. The first trench includes walls lined with a dielectric material and contains a conductive material. The first trench and the floor isolation region electrically isolate a pocket of the first conductivity type from the substrate.

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