The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Jan. 21, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Wenxu Xianyu, Suwon-si, KR;
Yongyoung Park, Hwaseong-si, KR;
Wooyoung Yang, Hwaseong-si, KR;
Jeongyub Lee, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0352 (2006.01); H01L 31/0224 (2006.01); H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14647 (2013.01); H01L 27/14601 (2013.01); H01L 27/14607 (2013.01); H01L 27/14692 (2013.01); H01L 27/1446 (2013.01); H01L 27/14627 (2013.01); H01L 31/022408 (2013.01); H01L 31/022425 (2013.01); H01L 31/035227 (2013.01);
Abstract
A photodetecting device, a method of manufacturing the photodetecting device, an image sensor, and a method of manufacturing the image sensor are provided. The photodetecting device includes a first insulation layer, a silicon layer disposed on the first insulation layer, a metal plug disposed through the first insulation layer and the silicon layer, a silicon wire disposed on the silicon layer, and an electrode connected to the silicon wire.